cystech electronics corp. spec. no. : c745i3 issued date : 2009.10.16 revised date : page no. : 1/8 MTN40N03I3 cystek product specification n-channel enhancement mode power mosfet bv dss : 30v r ds(on) : 21m i d : 36a MTN40N03I3 description the MTN40N03I3 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the to-251 package is universally preferred for all commercial-industrial applications features ? simple drive requirement ? dynamic dv/dt rating ? fast switching characteristic ? rohs compliant package symbol outline MTN40N03I3 to-251 b c g gate d drain s source g d s
cystech electronics corp. spec. no. : c745i3 issued date : 2009.10.16 revised date : page no. : 2/8 MTN40N03I3 cystek product specification absolute maximum ratings (t c =25 c) parameter symbol limits unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current @ t c =25 c, v gs =10v i d 36 a continuous drain current @t c =100c, v gs =10v i d 25 a pulsed drain current (note 1) i dm 150 a p d w total power dissipation (t c =25 ) linear derating factor 50 0.4 w/ c operating junction and storage temperature tj, tstg -55~+150 c note : 1 . repetitive rating; pulse width limited by maximum junction temperature. thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 2.5 c/w thermal resistance, junction-to-ambient, max r th,j-a 110 c/w
cystech electronics corp. spec. no. : c745i3 issued date : 2009.10.16 revised date : page no. : 3/8 MTN40N03I3 cystek product specification characteristics (t j =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0, i d =250 a, tj=25 : ? bv dss / ? tj - 0.037 - v/ c reference to 25c, i d =250 a v gs(th) 1 - 3 v v ds = v gs , i d =250 a *g fs - 26 - s v ds =10v, i d =18a i gss - - d 100 na v gs = d 20 - - 25 a v ds =30v, v gs =0 i dss - - 250 a v ds =24v, v gs =0, t c =125 c - 18 21 v gs =10v, i d =18a *r ds(on) - 24 30 m v gs =4.5v, i d =14a dynamic *qg - 17 - *qgs - 3 - *qgd - 10 - nc i d =18a, v ds =24v, v gs =5v *t d(on) - 7.2 - *tr - 60 - *t d(off) - 22.5 - *t f - 10 - ns v ds =15v, i d =18a, v gs =10v, r g =3.3 , r d =0.83 ciss - 800 - coss - 380 - crss - 133 - pf v gs =0v, v ds =25v, f=1mhz source-drain diode *v sd - - 1.3 v i s =36a, v gs =0v *i s - - 36 v d =v g =0v, v s =1.3v *i sm - - 150 a *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking MTN40N03I3 to-251 (rohs compliant) 80 pcs / tube, 50 tubes / box 40n03
cystech electronics corp. spec. no. : c745i3 issued date : 2009.10.16 revised date : page no. : 4/8 MTN40N03I3 cystek product specification characteristic curves
cystech electronics corp. spec. no. : c745i3 issued date : 2009.10.16 revised date : page no. : 5/8 MTN40N03I3 cystek product specification characteristic curves(cont.)
cystech electronics corp. spec. no. : c745i3 issued date : 2009.10.16 revised date : page no. : 6/8 MTN40N03I3 cystek product specification test circuits and waveforms
cystech electronics corp. spec. no. : c745i3 issued date : 2009.10.16 revised date : page no. : 7/8 MTN40N03I3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c745i3 issued date : 2009.10.16 revised date : page no. : 8/8 MTN40N03I3 cystek product specification to-251 dimension a e f g h j i 3 2 1 k c d b marking: product name 40n03 date code style: pin 1.gate 2.drain 3.source 3-lead to-251 plastic package cystek packa g e code: i3 *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.0177 0.0217 0.45 0.55 g 0.2559 - 6.50 - b 0.0354 0.0591 0.90 1.50 h - *0.1811 - *4.60 c 0.0177 0.0236 0.45 0.60 i - 0.0449 - 1.14 d 0.0866 0.0945 2.20 2.40 j - 0.0346 - 0.88 e 0.2441 0.2677 6.20 6.80 k 0.2047 0.2165 5.20 5.50 f 0.2677 0.2835 6.80 7.20 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
|
